TPN1200APL,L1Q
Toshiba Semiconductor and Storage
Deutsch
Artikelnummer: | TPN1200APL,L1Q |
---|---|
Hersteller / Marke: | TAEC Product (Toshiba Electronic Devices and Storage Corporation) |
Teil der Beschreibung.: | PB-F POWER MOSFET TRANSISTOR TSO |
Datenblätte: | None |
RoHs Status: | ROHS3 -konform |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
1+ | $0.85 |
10+ | $0.748 |
100+ | $0.5738 |
500+ | $0.4536 |
1000+ | $0.3629 |
2000+ | $0.3289 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
VGS (th) (Max) @ Id | 2.5V @ 300µA |
Vgs (Max) | ±20V |
Technologie | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse | 8-TSON Advance (3.1x3.1) |
Serie | U-MOSIX-H |
Rds On (Max) @ Id, Vgs | 11.5mOhm @ 20A, 10V |
Verlustleistung (max) | 630mW (Ta), 104W (Tc) |
Verpackung / Gehäuse | 8-PowerVDFN |
Paket | Tape & Reel (TR) |
Produkteigenschaften | Eigenschaften |
---|---|
Betriebstemperatur | 175°C |
Befestigungsart | Surface Mount |
Eingabekapazität (Ciss) (Max) @ Vds | 1855 pF @ 50 V |
Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
Typ FET | N-Channel |
FET-Merkmal | - |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain-Source-Spannung (Vdss) | 100 V |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 40A (Tc) |
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2023/12/20
![]() TPN1200APL,L1QToshiba Semiconductor and Storage |
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